CP681

PNP - Silicon RF Transistor Die

50mA, 20 Volt

MECHANICAL SPECIFICATIONS:

Die Size

15 x 15 MILS

Die Thickness

7.9 MILS

Base Bonding Pad Area

2.3 MIL DIAMETER

Emitter Bonding Pad Area

2.3 MIL DIAMETER

Top Side Metalization

Al-Si – 13,000Å

Back Side Metalization

Au – 12,000Å

Scribe Alley Width

3.0 MILS

Wafer Diameter

5 INCHES

Gross Die Per Wafer

74,000

The CP681 is a silicon PNP RF transistor designed for general purpose RF amplifier and mixer

applications.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

20

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

3.0

V

Continuous Collector Current

IC

50

mA

Operating and Storage Junction Temperature

TJ, Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=10V

100

nA

IEBO

VEB=2.0V

100

nA

BVCBO

IC=10μA

20

V

BVCEO

IC=1.0mA

20

V

BVEBO

IE=10μA

3.0

V

VCE(SAT)

IC=5.0mA, IB=500μA

0.5

V

VBE(ON)

VCE=10V, IC=5.0mA

0.9

V

hFE

VCE=10V, IC=5.0mA

60

fT

VCE=10V, IC=5.0mA, f=100MHz

600

MHz

Ccb

VCB=10V, IE=0, f=1.0MHz

0.85

pF

Cce

VCB=10V, IB=0, f=1.0MHz

0.65

pF

R0 (8-October 2013)

www.centr a lsemi.

com