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GKI07113 Datasheet(PDF) 2 Page - Sanken electric |
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GKI07113 Datasheet(HTML) 2 Page - Sanken electric |
2 / 6 page GKI07113 GKI07113-DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 2 Jan. 24, 2014 Thermal Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Thermal Resistance (Junction to Case) RθJC − − 1.6 °C/W Thermal Resistance (Junction to Ambient) RθJA Mounted on PCB* − − 40.3 °C/W * 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB. Electrical Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain to Source Breakdown Voltage V(BR)DSS ID = 100 μA, VGS = 0 V 75 − − V Drain to Source Leakage Current IDSS VDS = 75 V, VGS = 0 V − − 100 µA Gate to Source Leakage Current IGSS VGS = ± 20 V − − ± 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.0 2.0 2.5 V Static Drain to Source On-Resistance RDS(ON) ID = 27.2 A, VGS = 10 V − 7.0 9.5 mΩ ID = 13.6 A, VGS = 4.5 V − 8.0 10.9 mΩ Gate Resistance RG f = 1 MHz − 1.1 − Ω Input Capacitance Ciss VDS = 25 V VGS = 0 V f = 1 MHz − 4040 − pF Output Capacitance Coss − 370 − Reverse Transfer Capacitance Crss − 215 − Total Gate Charge (VGS = 10 V) Qg1 VDS = 38 V ID = 31.2 A − 54.0 − nC Total Gate Charge (VGS = 4.5 V) Qg2 − 25.0 − Gate to Source Charge Qgs − 9.8 − Gate to Drain Charge Qgd − 7.3 − Turn-On Delay Time td(on) VDD = 38 V ID = 31.2 A VGS = 10 V, RG = 4.7 Ω Refer to Figure 2 − 6.8 − ns Rise Time tr − 6.4 − Turn-Off Delay Time td(off) − 29.4 − Fall Time tf − 13.3 − Source to Drain Diode Forward Voltage VSD IS = 27.2 A, VGS = 0 V − 0.9 1.5 V Source to Drain Diode Reverse Recovery Time trr IF = 31.2 A di/dt = 100 A/µs Refer to Figure 3 − 44.3 − ns Source to Drain Diode Reverse Recovery Charge Q rr − 69.1 − nC |
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