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MGD623N Datasheet(PDF) 1 Page - Sanken electric |
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MGD623N Datasheet(HTML) 1 Page - Sanken electric |
1 / 10 page IGBT MGD623N July, 2009 Sanken Electric Co.,Ltd. T04-002EA-090721 http://www.sanken-ele.co.jp/en/ ■Features • Low Saturation Voltage VCE(sat)=1.7V typ. • High Speed tf=200ns typ. • Low VF FRD Included VF=1.2V typ. ■Package----TO-3P ■Applications • Current Resonance Inverter Switching • Induction Heating Cooking ■Equivalent circuit Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±30 V Continuous Collector Current IC 50 A Pulsed Collector Current IC(pulse)1) 100 A Diode Continuous Forward Current IF 30 A Diode pulsed Forward Current IF(pulse) 1) 60 A Maximum Power Dissipation PC 150 (Tc=25°C) W Thermal Resistance IGBT θj-c IGBT 0.833 °C /W Thermal Resistance Di θj-c Di 1.67 °C /W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to 150 °C 1) PW≤1ms, Duty cycle≤1% G (1) E (3) C (2) |
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