SC251M datasheet(1/4 Pages) DIGITRON

Part #	SC251M

Description	BIDIRECTIONAL TRIODE THYRISTOR

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Manufacturer	DIGITRON [Digitron Semiconductors]

Direct Link	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20130213

SC250, SC251, SC250()3 SERIES

BIDIRECTIONAL TRIODE THYRISTOR

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage

SC250B, SC251B, S250B3

SC250D, SC251D, S250D3

SC250E, SC251E, S250E3

SC250M, SC251M, S250M3

VDRM

200

400

500

600

Volts

Forward on-state current RMS

IT(RMS)

15

Amps

Peak forward surge current

(one cycle, sine wave, 60Hz)

ITSM

100

Amps

Circuit fusing considerations

(t = 1ms)

(t = 8.3ms)

I2t

20

41.5

A2s

Peak gate power

PGM

10

Watts

Average gate power

PG(AV)

0.5

Watts

Peak gate power (pulse width = 10µs)

IGM

2

Amps

Operating junction temperature range

TJ

-40 to +115

°C

Storage temperature range

Tstg

-40 to +125

°C

Stud torque

30

In. lb.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

SC250, SC251

SC250()3

R

ӨJC

2.0

2.3

°C/W

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted. Values apply for either polarity of MT2. Characteristics referenced to MT1.)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Peak forward blocking current

(VD = rated VDRM, gate open)

TC = 25°C

TC = 115°C

IDRM

-

0.1

0.5

mA

Peak on-state voltage

(ITM = 21A peak, pulse width = 1ms, duty cycle ≤ 2%)

VT

-

1.65

Volts

Critical rate of rise of off-state voltage

(Rated VDRM, gate open, exponential waveform, TC = 115°C)

dv/dt

100

-

V/µs

Critical rate of rise of commutating off-state voltage (1)

(IT(RMS) = Rated RMS on state current, VD = VDRM, gate open,

commutating di/dt = 8A/ms)

SC250, SC251: TC = 84°C

SC250()3: TC = 78°C

dv/dt(c)

4

-

V/µs

Gate trigger current

(VD = 12V)

MT2(+), G(+); MT2(-), G(-); RL = 100Ω)

MT2(+), G(-);RL = 50Ω)

IGT

-

50

mA

Gate trigger current

(VD = 12V, TC = -40°C)

MT2(+), G(+); MT2(-), G(-); RL = 50Ω)

MT2(+), G(-);RL = 25Ω)

IGT

-

80

mA

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