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SC251M Datasheet(PDF) 1 Page - Digitron Semiconductors |
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SC251M Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 4 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130213 SC250, SC251, SC250()3 SERIES BIDIRECTIONAL TRIODE THYRISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage SC250B, SC251B, S250B3 SC250D, SC251D, S250D3 SC250E, SC251E, S250E3 SC250M, SC251M, S250M3 VDRM 200 400 500 600 Volts Forward on-state current RMS IT(RMS) 15 Amps Peak forward surge current (one cycle, sine wave, 60Hz) ITSM 100 Amps Circuit fusing considerations (t = 1ms) (t = 8.3ms) I2t 20 41.5 A2s Peak gate power PGM 10 Watts Average gate power PG(AV) 0.5 Watts Peak gate power (pulse width = 10µs) IGM 2 Amps Operating junction temperature range TJ -40 to +115 °C Storage temperature range Tstg -40 to +125 °C Stud torque 30 In. lb. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case SC250, SC251 SC250()3 R ӨJC 2.0 2.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted. Values apply for either polarity of MT2. Characteristics referenced to MT1.) Characteristic Symbol Min. Typ. Max. Unit Peak forward blocking current (VD = rated VDRM, gate open) TC = 25°C TC = 115°C IDRM - - - - 0.1 0.5 mA Peak on-state voltage (ITM = 21A peak, pulse width = 1ms, duty cycle ≤ 2%) VT - - 1.65 Volts Critical rate of rise of off-state voltage (Rated VDRM, gate open, exponential waveform, TC = 115°C) dv/dt 100 - - V/µs Critical rate of rise of commutating off-state voltage (1) (IT(RMS) = Rated RMS on state current, VD = VDRM, gate open, commutating di/dt = 8A/ms) SC250, SC251: TC = 84°C SC250()3: TC = 78°C dv/dt(c) 4 4 - - - - V/µs Gate trigger current (VD = 12V) MT2(+), G(+); MT2(-), G(-); RL = 100Ω) MT2(+), G(-);RL = 50Ω) IGT - - - - 50 50 mA Gate trigger current (VD = 12V, TC = -40°C) MT2(+), G(+); MT2(-), G(-); RL = 50Ω) MT2(+), G(-);RL = 25Ω) IGT - - - - 80 80 mA |
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