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STF11NM50N Datasheet(PDF) 5 Page - STMicroelectronics |
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STF11NM50N Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD11NM50N, STF11NM50N, STP11NM50N Electrical characteristics Doc ID 17156 Rev 3 5/16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250 V, ID = 4.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) - 8 10 33 10 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 8.5 34 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 8.5 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 230 2.1 18 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 275 2.5 18 ns µC A |
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