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STFI31N65M5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STFI31N65M5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 25 page DocID022848 Rev 3 5/25 STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Electrical characteristics 2 Electrical characteristics (T C = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 1 mA, V GS = 0 650 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 650 V V DS = 650 V, T C =125 °C 1 100 μA μA I GSS Gate-body leakage current (V DS = 0) V GS = ± 25 V ± 100 nA V GS(th) Gate threshold voltage V DS = V GS , I D = 250 μA 345 V R DS(on) Static drain-source on-resistance V GS = 10 V, I D = 11 A 0.124 0.148 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 100 V, f = 1 MHz, V GS = 0 - 1865 45 4.2 - pF pF pF C o(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance time related V DS = 0 to 520 V, V GS = 0 -146 - pF C o(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance energy related -43 - pF R G Intrinsic gate resistance f = 1 MHz open drain - 2.8 - Ω Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD = 520 V, I D = 11 A, V GS = 10 V (see Figure 20) - 45 11.5 20 - nC nC nC |
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