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OPA656UBG4 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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OPA656UBG4 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 25 page OPA656 4 SBOS196G www.ti.com ELECTRICAL CHARACTERISTICS: VS = ±5V: High Grade DC Specifications(1) RF = 250Ω, RL = 100Ω, and G = +2, unless otherwise noted. OPA656UB, NB (High-Grade) TYP MIN/MAX OVER TEMPERATURE 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(2) 70 °C(3) +85 °C(3) UNITS MAX LEVEL(4) Input Offset Voltage VCM = 0V ±0.1 ±0.6 ±0.85 ±0.9 mV Max A Input Offset Voltage Drift VCM = 0V ±2 ±6 ±6 ±6 µV/°CMax A Input Bias Current VCM = 0V ±1 ±5 ±450 ±1250 pA Max A Input Offset Current VCM = 0V ±0.5 ±5 ±450 ±1250 pA Max A Common-Mode Rejection Ratio (CMRR) VCM = ±0.5V 95 88 86 84 dB Min A Power-Supply Rejection Ratio (+PSRR) +VS = 4.5V to 5.5V 78 74 72 70 dB Min A (–PSRR) –VS = –4.5V to –5.5V 68 62 60 58 dB Min A NOTES: (1) All other specifications are the same as the standard-grade. (2) Junction temperature = ambient for 25 °C min/max specifications. (3) Junction temperature = ambient at low temperature limit: junction temperature = ambient +20 °C at high temperature limit for over temperature min/max specifications. (4) Test Levels: (A) 100% tested at 25 °C. Over temperature limits by characterization and simulation. |
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