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THS4151CDGNG4 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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THS4151CDGNG4 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 35 page ABSOLUTE MAXIMUM RATINGS (1) THS4150 THS4151 SLOS321G – MAY 2000 – REVISED MARCH 2009........................................................................................................................................................... www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. AVAILABLE OPTIONS(1) PACKAGED DEVICES EVALUATION TA MSOP PowerPAD™ MSOP MODULES SMALL OUTLINE(D) (DGN) SYMBOL (DGK) SYMBOL THS4150CD THS4150CDGN AQB THS4150CDGK ATT THS4150EVM 0°C to 70°C THS4151CD THS4151CDGN AQD THS4151CDGK ATU THS4151EVM THS4150ID THS4150IDGN AQC THS4150IDGK AST – –40°C to 85°C THS4151ID THS4151IDGN AQE THS4151IDGK ASU – (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Over operating free-air temperature range (unless otherwise noted). UNIT VCC- to Supply voltage ±16.5 V VCC+ VI Input voltage ±VCC IO Output current(2) 150 mA VID Differential input voltage ±6 V Continuous total power dissipation See Dissipation Rating Table Maximum junction temperature(3) 150°C TJ Maximum junction temperature, continuous operation, long term reliability(4) 125°C C suffix 0°C to 70°C TA Operating free-air temperature I suffix –40°C to 85°C Tstg Storage temperature –65°C to 150°C Lead temperature (5) HBM 2500 V ESD ratings CDM 1500 V MM 200 V (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The THS415x may incorporate a PowerPad™ on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the PowerPad™ thermally enhanced package. (3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process. (4) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. (5) See the MSL/Reflow Rating information provided with the material, or see TI's web site at www.ti.com for the latest information. 2 Submit Documentation Feedback Copyright © 2000–2009, Texas Instruments Incorporated Product Folder Link(s): THS4150 THS4151 |
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