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MBR2545CT Datasheet(PDF) 1 Page - Digitron Semiconductors |
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MBR2545CT Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 MBR2535CT-MBR2545CT 30A SCHOTTKY RECTIFIERS MAXIMUM RATINGS MBR Rating Symbol 2535CT 2545CT Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 35 45 V Average rectified forward current (Rated VR) IF(AV) 30 @ TC = 130°C A Non-repetitive peak surge current per diode (surge applied at rated load conditions, halfwave, single phase, 60Hz) IFSM 150 A Peak repetitive reverse surge current (2.0µs, 1.0kHz) IRRM 1.0 A Operating junction temperature range TJ -65 to +150 °C Storage temperature range Tstg -65 to +175 °C Voltage rate of change (Rated VR) dv/dt 1000 V/µs Maximum thermal resistance Junction to case R ӨJC 1.5 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) MBR Parameter Symbol 2535CT 2545CT Unit Maximum instantaneous forward voltage (1) (IF = 30A, TC = 125°C) (IF = 30A, TC = 25°C) VF 0.73 0.82 V Maximum instantaneous reverse current (1) (Rated dc voltage, TC = 125°C) (Rated dc voltage, TC = 25°C) IR 40 0.2 mA Note 1: Pulse test: Pulse width = 300ms, duty cycle ≤ 2%. MECHANICAL CHARACTERISTICS Case TO-220AB Marking Alpha-numeric Polarity Cathode band fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20121204 TO-220AB Inches Millimeters Min Max Min Max A 0.570 0.620 14.480 15.750 B 0.380 0.405 9.660 10.280 C 0.160 0.190 4.070 4.820 D 0.025 0.035 0.640 0.880 F 0.142 0.147 3.610 3.730 G 0.095 0.105 2.420 2.660 H 0.110 0.155 2.800 3.930 J 0.018 0.025 0.460 0.640 K 0.500 0.562 12.700 14.270 L 0.045 0.060 1.150 1.520 N 0.190 0.210 4.830 5.330 Q 0.100 0.120 2.540 3.040 R 0.080 0.110 2.040 2.790 S 0.045 0.055 1.150 1.390 T 0.235 0.255 5.970 6.470 U - 0.050 - 1.270 |
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