 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AOI452 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
|
||||||||||||||||||||||||||||||
AOI452 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
|
|
2 / 5 page  AOI452 Symbol Min Typ Max Units BVDSS 25 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1 1.8 3 V ID(ON) 100 A 7 8.7 TJ=125°C 10 12 12 14.7 mΩ gFS 35 S VSD 0.72 1 V IS 55 A Ciss 1230 1476 pF Coss 315 400 pF Crss 190 280 pF Rg 1.2 2 Ω Qg(10V) 26.4 32 nC Qg(4.5V) 13.5 17 nC Qgs 3.9 5 nC Qgd 7.75 10 nC tD(on) 6.5 8 ns tr 10 20 ns tD(off) 22.7 30 ns tf 6.2 12 ns trr 23.06 28 ns Qrr 15.25 18 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250uA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=100A/µs VGS=0V, VDS=12.5V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS, ID=250µA VDS=25V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance mΩ IS=1A, VGS=0V VDS=5V, ID=10A VGS=4.5V, ID=20A Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=12.5V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=12.5V, RL=0.6Ω, RGEN=3Ω A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev0: April 2007 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Similar Part No. - AOI452 |
|
Similar Description - AOI452 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
