SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

UNIT

Min.

0.83

0.30

THERMAL RESISTANCE

PARAMETER

Thermal resistance, case to heatsink

Thermal resistance, junction to case

SYMBOL

Typ.

Max.

ºC/W

50

Thermal resistance, junction to ambient

UNIT

V

ns

μA

pF

nC

Max.

10.0

500

500

-10

10

0.63

1165

30

70

50

290

340

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

I = 10mA,

D

V

= 0V

GS

TEST CONDITIONS

I = 10mA,

D

V

= V

DS

GS

V

=500V, V

=0V

DS

GS

T = 25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Total gate charge

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

48

Gate to source charge

V

= 400V, V

= 10V,

DD

GS

I =6A

D

(Note 1,2)

Drain to source leakage current

V/ºC

Ω

S

μA

T =125°C

C

Typ.

Min.

0.27

50.0

80

V

= 200V,

DD

(Note 1,2)

V

= 10V

GS

I = 10A, R =50Ω, R = 20Ω,

D

G

D

V

= 10V, V

= 0V, f =1MHz

DS

GS

V

= 30V, V

= 0V

GS

DS

V

= -30V, V

= 0V

GS

DS

V

=10V, I =10A

DS

D

Forward transconductance

Static drain to source on-state resistance

l = 10.0A,

D

V

= 10V

GS

Gate to drain charge (Miller charge)

32

V

=400V, V

=0V

DS

GS

2.0

V

4.0

V

=V

, I =1mA

GS

DS

D

=10V

Gate threshold voltage

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)

C

UNIT

Max.

TEST CONDITIONS

PARAMETER

SYMBOL

Typ.

Min.

V

I

= 20A, V

= 0V

SD

GS

Diode forward voltage

1.7

Integral reverse P-N junction

diode in the MOSFET

Continuous source to drain current

SD

20

D (Drain)

G

(Gate)

S (Source)

A

Pulsed source current

80

I

= 20A, V

= 0V,

SD

GS

dI /dt = 100A/µs

F

Reverse recovery time

ns

540

μC

Reverse recovery charge

5.4

Note: 1. Pulse test: Pulse width ≤ 10μs, duty cycle ≤ 1%.

3720

www.nellsemi.com

Page 2 of 6

STATIC

DYNAMIC

0.21

17.0

nH

13

5

Internal source inductance

Internal drain inductance

Between lead, 6mm(0.25”) from

package and center of die contact

2. Essentially independent of operating temperature.

2SK2837 Series