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PESD5V0S1B Datasheet(PDF) 6 Page - NXP Semiconductors |
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PESD5V0S1B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 20 August 2009 6 of 15 NXP Semiconductors PESD5V0S1BA/BB/BL Low capacitance bidirectional ESD protection diodes Tamb = 25 °C Fig 3. Peak pulse power dissipation as a function of exponential time duration tp; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values Tamb = 25 °C; f = 1 MHz Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values 001aaa202 tp (µs) 1104 103 10 102 102 103 Ppp (W) 10 Tj (°C) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 PPP 0 PPP(25°C) VR (V) 05 4 23 1 001aaa203 30 26 34 38 Cd (pF) 22 001aaa204 Tj (°C) 75 150 125 100 10 1 102 10−1 IRM(Tj) IRM(Tj=85°C) |
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