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IRF740 Datasheet(PDF) 6 Page - Nell Semiconductor Co., Ltd |
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IRF740 Datasheet(HTML) 6 Page - Nell Semiconductor Co., Ltd |
6 / 7 page Fig.12c. Maximum avalanche energy vs. Drain current SEMICONDUCTOR Nell High Power Products RoHS RoHS IRF740 Series 1000 800 600 400 200 0 Starting Junction temperature, T (°C) J + - Fig.13b. Gate charge test circuit QG QGS QGD 10V VGS Charge • • • P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. I SD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * + - + + + - - - • • • • Circuit Layout Considerations Low Stray lnductance Ground Plane Low Leakage lnductance Current Transformer dv/dt controlled by RG Driver same type as D.U.T. l controlled by Duty Factor D SD " " D.U.T. -Device Under Test D.U.T. RG VDD *V = 5V for Logic Level Devices and 3V for drive devices GS Current Regulator Same Type as D.U.T. 12V 0.2µF 50KΩ 0.3µF VGS 3mA D.U.T. VDS RD RG Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET Fig.13a. Basic gate charge waveform Current Sampling Resistors 25 50 75 100 125 150 1200 www.nellsemi.com Page 6 of 7 V = 50 V DD lD TOP BOTTOM 4.5A 5.3A 10A |
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Similar Description - IRF740 |
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