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IRF4410 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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IRF4410 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 9 page SEMICONDUCTOR RoHS RoHS N-Channel Power MOSFET Nell High Power Products IRF4410 Series (97A, 100Volts) They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, UPS and general purpose switching applications . The Nell IRF4410 is a three-terminal silicon device with current conduction capability of 97A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts. DESCRIPTION Low reverse transfer capacitance (C = 170pF typical) RSS R = 9.0mΩ @ V = 10V DS(ON) GS Ultra low gate charge(120nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature FEATURES PRODUCT SUMMARY I (A) D 97 V (V) DSS 100 9.0 @ V = 10V GS 120 R (mΩ) DS(ON) Q (nC) max. G D (Drain) G (Gate) S (Source) TO-220AB (IRF4410A) D G D S 2 TO-263(D PAK) (IRF4410H) UNIT V /ns V W A mJ ºC -55 to 175 VALUE 97 69 100 ±20 390 100 16 242 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C T =25°C to 150°C J TEST CONDITIONS R =20KΩ GS T =25°C C T =100°C C Operation junction temperature Storage temperature Single pulse avalanche energy(Note 2) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Peak diode recovery dv/dt(Note 3) Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . . lbf in (N m) 300 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 175 Note: 1. . Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 58 T =25°C C 2 .I = 58A, V = 50V, L = 0.143mH, R = 25Ω, starting T =25°C. AS DD GS J 105 Repetitive avalanche energy(Note 1) EAR 3 .I ≤ 58A, di/dt ≤ 610A/µs, V ≤ V , starting T ≤175°C. SD DD (BR)DSS J 230 Total power dissipation G S D I =58A, R =50Ω, V =10V AR GS GS EAS I =58A, L=0.143mH AS www.nellsemi.com Page 1 of 9 |
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