SI4388DY datasheet(10/15 Pages) VISHAY

Part #	SI4388DY

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 74344

S09-0392-Rev. B, 09-Mar-09

Vishay Siliconix

Si4388DY

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

3

5

8

10

13

0

255075

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

0.0

0.9

1.8

2.7

3.6

4.5

0

255075

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

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SI4388DY Datasheet(PDF) 10 Page - Vishay Siliconix

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