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2SC3866 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC3866 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3866 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA , IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA , IC=0 10 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=900V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 10 Switching times ton Turn-on time 1.0 µs ts Storage time 4.0 µs tf Fall time IC=2A; IB1=0.4A IB2=-0.8A;RL=150A Pw=20µs,DutyB2% 0.8 µs |
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