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BAR40S3 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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BAR40S3 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 6 page CYStech Electronics Corp. Spec. No. : C302S346.13 Revised Date : 2012.02.10 Page No. : 2/7 BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 CYStek Product Specification Absolute Maximum Ratings • Maximum Temperatures Storage Temperature Tstg.................................................................................................... -65~+150 °C Junction Temperature Tj .......................................................................................................-55~ +125 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25 °C) Ptot (Note) ......................................................................... 200 mW • Maximum Voltages and Currents (Ta=25°C) Repetitive Peak Reverse Voltage VRRM............................................................................................... 40 V Continuous Forward Current IF ................................................................................................... 200 mA Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA Note: for double diodes, Ptot is the total power dissipation of both diodes. Characteristics (Ta=25 °C) Characteristic Symbol Condition Min. Max. Unit Reverse Breakdown Voltage VBR IR=100μA 40 - V VF(1) IF=1mA - 320 mV Forward Voltage (Note 1) VF(2) IF=40mA - 500 mV VF(3) IF=100mA - 550 mV Reverse Leakage Current (Note 2) IR VR=30V, Tj=25℃ - 200 nA Diode Capacitance CD VR=1V, f=1MHz - 10 pF Reverse Recovery Time trr IF=IR=10mA RL=100 Ω measured at IR=1mA - 5 ns Notes : 1.pulse test, tp=380μs,duty cycle<2%. 2.pulse test, tp=5ms,duty cycle<2%. |
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