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W40S11-02
8
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Parameter
Description
Rating
Unit
VDD, VIN
Voltage on any pin with respect to GND
–0.5 to +7.0
V
TSTG
Storage Temperature
–65 to +150
°C
TA
Operating Temperature
0 to +70
°C
TB
Ambient Temperature under Bias
–55 to +125
°C
DC Electrical Characteristics: TA = 0°C to +70°C, VDD = 3.3V±5%
Parameter
Description
Test Condition/Comments
Min
Typ
Max
Unit
IDD
3.3V Supply Current
at 66 MHz
120
160
mA
IDD
3.3V Supply Current
at 100 MHz
185
220
mA
IDD Tristate
3.3V Supply Current in
Three-State
510
mA
Logic Inputs
VIL
Input Low Voltage
VSS–0.3
0.8
V
VIH
Input High Voltage
2.0
VDD+0.5
V
IILEAK
Input Leakage Current, BUF_IN
–5+5
µA
IILEAK
Input Leakage Current[3]
–20
+5
µA
Logic Outputs (SDRAM0:9)[4]
VOL
Output Low Voltage
IOL = 1 mA
50
mV
VOH
Output High Voltage
IOH = –1 mA
3.1
V
IOL
Output Low Current
VOL = 1.5V
70
110
185
mA
IOH
Output High Current
VOH = 1.5V
65
100
160
mA
Pin Capacitance/Inductance
CIN
Input Pin Capacitance
5pF
COUT
Output Pin Capacitance
6
pF
LIN
Input Pin Inductance
7nH
Note:
3.
OE, SDATA, and SCLOCK logic pins have a 250-k
Ω internal pull-up resistor (V
DD – 0.8V).
4.
All SDRAM outputs loaded by 6" transmission lines with 22-pF capacitors on ends.
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