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BTN5551K3-0-TB-G Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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BTN5551K3-0-TB-G Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
3 / 6 page CYStech Electronics Corp. Spec. No. : C208K3 Issued Date : 2012.06.28 Revised Date : 2012.10.02 Page No. : 3/6 BTN5551K3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 01 23 45 6 Collector-to-Emitter Voltage---VCE(V) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 012 34 56 Collector-to-Emitter Voltage---VCE(V) 1mA 1.5mA 2mA 2.5mA 5mA IB=500uA Current Gain vs Collector Current 10 100 1000 0.1 1 10 100 Collector Current---IC(mA) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=5V Saturation Voltage vs Collector Current 10 100 1000 1 10 100 Collector Current---IC(mA) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT=10IB Saturation Voltage vs Collector Current 10 100 1000 10000 0.1 1 10 100 Collector Current---IC(mA) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT=50IB On Voltage vs Collector Current 100 1000 10000 1 10 100 Collector Current---IC(mA) VBEON@VCE=6V Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C |
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