© 2012 Fairchild Semiconductor Corporation

www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113

Rev. B0

1

August 2012

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /

MMBFJ112_SB51338 / MMBFJ113

N-Channel Switch

Features

• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.

• Sourced from Process 51.

• Source & Drain are interchangeable.

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

Symbol

Parameter

Value

Units

Drain-Gate Voltage

35

V

Gate-Source Voltage

-35

V

Forward Gate Current

50

mA

Operating and Storage Junction Temperature Range

-55 to +150

C

Symbol

Parameter

Max.

Units

J111-113

*MMBFJ111-113

Total Device Dissipation

Derate above 25

C

625

5.0

350

2.8

mW

mW/

C

Thermal Resistance, Junction to Case

125

C/W

Thermal Resistance, Junction to Ambient

357

556

C/W

J111

MMBFJ111

SOT-23

Mark: MMBFJ111 - 6P

D

S

J112

MMBFJ112

G

S

D

TO-92

J113

MMBFJ112_SB51338

MMBFJ113

G

MMBFJ112 - 6R

MMBFJ112_SB51338 - 6R

MMBFJ113 - 6S

NOTE: Source & Drain

are interchangeable.