BUK9K18-40E115 datasheet(6/13 Pages) NXP

Part #	BUK9K18-40E115

Description	Dual N-channel TrenchMOS logic level FET

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Manufacturer	NXP [NXP Semiconductors]

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NXP Semiconductors

BUK9K18-40E

Dual N-channel TrenchMOS logic level FET

BUK9K18-40E

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Product data sheet

23 April 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VGS = 10 V; ID = 10 A; Tj = 25 °C;

Fig. 12

-

13.5

16

mΩ

Dynamic characteristics FET1 and FET2

QG(tot)

total gate charge

ID = 10 A; VDS = 32 V; VGS = 10 V;

Tj = 25 °C; Fig. 14; Fig. 15

-

14.5

-

nC

QGS

gate-source charge

-

2

-

nC

QGD

gate-drain charge

ID = 10 A; VDS = 32 V; VGS = 10 V;

Tj = 25 °C; Fig. 14

-

3

-

nC

Ciss

input capacitance

-

796

1061

pF

Coss

output capacitance

-

137

164

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 16

-

82

112

pF

td(on)

turn-on delay time

-

4

-

ns

tr

rise time

-

4.6

-

ns

td(off)

turn-off delay time

-

17.5

-

ns

tf

fall time

VDS = 32 V; RL = 3.3 Ω; VGS = 10 V;

RG(ext) = 5 Ω; Tj = 25 °C; ID = 10 A

-

9.9

-

ns

Source-drain diode FET1 and FET2

VSD

source-drain voltage

IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17

-

0.78

1.2

V

trr

reverse recovery time

-

23.7

-

ns

Qr

recovered charge

IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 20 V; Tj = 25 °C

-

16.8

-

nC

003aaj631

0

10

20

30

40

0

10

20

30

40

ID(A)

gfs

(S)

Fig. 6. Forward transconductance as a function of

drain current; typical values

003aaj630

0

30

60

90

0

2.5

5

7.5

10

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

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