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BUK9K18-40E115 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9K18-40E115 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors BUK9K18-40E Dual N-channel TrenchMOS logic level FET BUK9K18-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 23 April 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 12 - 13.5 16 mΩ Dynamic characteristics FET1 and FET2 QG(tot) total gate charge ID = 10 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 15 - 14.5 - nC QGS gate-source charge - 2 - nC QGD gate-drain charge ID = 10 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; Fig. 14 - 3 - nC Ciss input capacitance - 796 1061 pF Coss output capacitance - 137 164 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 16 - 82 112 pF td(on) turn-on delay time - 4 - ns tr rise time - 4.6 - ns td(off) turn-off delay time - 17.5 - ns tf fall time VDS = 32 V; RL = 3.3 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C; ID = 10 A - 9.9 - ns Source-drain diode FET1 and FET2 VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.78 1.2 V trr reverse recovery time - 23.7 - ns Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C - 16.8 - nC 003aaj631 0 10 20 30 40 0 10 20 30 40 ID(A) gfs (S) Fig. 6. Forward transconductance as a function of drain current; typical values 003aaj630 0 30 60 90 0 2.5 5 7.5 10 VGS(V) RDSon (mΩ) Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values |
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