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STPSC2006CW Datasheet(PDF) 1 Page - STMicroelectronics |
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STPSC2006CW Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  March 2011 Doc ID 018506 Rev 1 1/7 7 STPSC2006CW 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1. Device summary Symbol Value IF(AV) 2 x 10 A VRRM 600 V Tj (max) 175 °C QC (typ) 12 nC A1 K A2 A1 A2 K TO-247 STPSC2006CW www.st.com |
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