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2SD1855 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1855 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1855 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 80 V V(BR)EBO Collector-emitter breakdown voltage IE=50µA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V 60 320 fT Transition frequency IC=0.5A; VCE=5V 8 MHz COB Collector output capacitance f=1MHz ; VCB=10V 90 pF hFE Classifications D E F 60-120 100-200 160-320 |
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