OP525 datasheet(3/5 Pages) OPTEK

Part #	OP525

Description	Silicon Phototransistor and Photo Darlington

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Manufacturer	OPTEK [OPTEK Technologies]

Direct Link	http://www.optekinc.com

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OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. —

1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747

FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue F

05/2012

Page 3 of 5

Silicon Phototransistor and Photo Darlington

in 1210 SMD Package

OP525, OP525DA, OP525F

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Storage Temperature Range

-40o C to +100o C

Operating Temperature Range

-40o C to +80o C

Lead Soldering Temperature(1)

260° C

Collector-Emitter Voltage

OP525, OP525F

OP525DA

30 V

35 V

Emitter-Collector Voltage

5 V

Power Dissipation(2)

OP525, OP525F

OP525DA

75 mW

100 mW

Collector Current

OP525, OP525F

OP525DA

20 mA

30 mA

Notes:

1. Solder time less than 5 seconds at temperature extreme.

2. Derate linearly at 1.33 mW/° C above 25° C.

3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less

than 10% over the entire lens surface of the phototransistor being tested.

4. To calculate typical collector dark current in µA, use the formulate ICEO = 10

(0.04 t - ¾), where TA is the ambient temperature in ° C.

Electrical Characteristics (TA = 25°C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

IC(ON)

On-State Collector Current

OP525F

OP525

OP525DA

2.0

1.0

10.0

-

mA

VCE = 5.0 V, EE = 0.5 mW/cm

2

VCE = 5.0 V, EE = 1.5 mW/cm

2 (3)

VCE = 5.0 V, EE = 0.15 mW/cm

2 (3)

VCE(SAT)

Collector-Emitter Saturation Voltage

OP525, OP525F

OP525DA

-

0.4

1.7

V

IC = 100 µA, EE = 1.0 mW/cm

2 (3)

IC = 1 mA, EE = 0.5 mW/cm

2 (3)

ICEO

Collector-Emitter Dark Current

OP525, OP525F

OP525DA

-

100

200

nA

VCC= 10.0 V

(4)

VBR(CEO)

Collector-Emitter Breakdown Voltage

OP525, OP525F

OP525DA

30

35

-

V

IC= 100 µA, EE = 0

IC= 1 mA, EE = 0

VBR(ECO)

Emitter-Collector Breakdown Voltage

OP525, OP525F

OP525DA

5

-

V

IE= 100 µA, EE = 0

tr, tf

Rise and Fall Times

OP525, OP525F

OP525DA

-

15

50

-

µs

IC= 1 mA, RL = 1KΩ

λ 0.5

Spectral Bandwidth OP525F

750

-

1100

nm

-

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