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2SC3090 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC3090 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3090 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=< 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1.2A ; VCE=5V 15 50 hFE -2 DC current gain IC=6A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 160 pF fT Transition frequency IC=1.2A ; VCE=10V 18 MHz Switching times ton Turn-on time 1.0 µs ts Storage time 3.0 µs tf Fall time IC=7A; IB1=-IB2=1.4A RL=28.6D,VCC=200V 1.0 µs hFE-1 classifications L M N 15-30 20-40 30-50 |
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