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MBR1035CA Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # MBR1035CA
Description  10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

MBR1035CA Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  MBR1035CA Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. MBR1035CA Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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CREAT BY ART
Low power loss, high efficiency
High current capability, low forward voltage drop
Guard-ring for overvoltage protection
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR
1035
CA
MBR
1045
CA
MBR
1050
CA
MBR
1060
CA
MBR
1090
CA
MBR
10100
CA
MBR
10150
CA
MBR
10200
CA
Units
VRRM
35
45
50
60
90
100
150
200
V
VRMS
24
31
35
42
63
70
105
140
V
VDC
35
45
50
60
90
100
150
200
V
IRRM
A
dV/dt
V/us
RθJC
TJ
TSTG
0.1
0.85
V
0.85
0.75
10
0.88
Maximum Instantaneous Reverse Current @ T A=25 ℃
at Rated DC Blocking Voltage
@ T A=125 ℃
IR
VF
0.70
0.57
0.80
15
10
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
0.95
IFSM
120
0.98
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Note 1: 2.0uS Pulse Width, f=1.0KHz
Operating Junction Temperature Range
Storage Temperature Range
- 65 to + 175
- 65 to + 150
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Cases: JEDEC TO-220AB molded plastic body
Features
High surge capability
Metal silicon junction, majority carrier conduction
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Weight: 2.0 gram approximately
Maximum Typical Thermal Resistance
Type Number
1.0
Voltage Rate of Change (Rated V R)
mA
mA
A
Polarity: As marked
Mounting torque: 5 in. - lbs, max
Mounting position:Any
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
IF(AV)
A
10,000
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
10
0.67
0.80
0.65
Maximum Instantaneous Forward Voltage at (Note 2)
IF=5A, TA=25℃
IF=5A, TA=125℃
IF=10A, TA=25℃
IF=10A, TA=125℃
Peak Repetitive Reverse Surge Current (Note 1)
1.5
25
A
0.5
0.88
0.78
0.90
0.75
®
MBR1035CA thru MBR10200CA
Pb Free Plating Product
MBR1035CA thru MBR10200CA
10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
Pb
.196(5.00)
.054(1.39)
.038(0.96)
.419(10.66)
.139(3.55)
MIN
.163(4.16)
.045(1.15)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
.387(9.85)
TO-220AB
Unit : inch (mm)
Positive
Negative
Common Cathode
Case
Case
Common Anode
Suffix "CA"
Suffix "CT"
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/2
Rev.04/2014
℃/W


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