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MTB02N03H8 Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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MTB02N03H8 Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
3 / 11 page CYStech Electronics Corp. Spec. No. : C575H8 Issued Date : 2012.05.09 Revised Date :2012.11.12 Page No. : 3/11 MTB02N03H8 CYStek Product Specification Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qg (VGS=10V) *1, 2 - 80 - Qg (VGS=4.5V) *1, 2 - 27 - Qgs *1, 2 - 19 - Qgd *1, 2 - 38 - nC VDS=15V, VGS=10V, ID=30A td(ON) *1, 2 - 20 - tr *1, 2 - 36 - td(OFF) *1, 2 - 80 - tf *1, 2 - 33 - ns VDS=15V, ID=24A, VGS=10V, RGS=2.7Ω Rg - 1.2 - Ω VGS=15mV, VDS=0V, f=1MHz Source-Drain Diode IS *1 - - 75 ISM *3 - - 150 A VSD *1 - - 1.3 V IF=30A, VGS=0V trr - 35 - ns Qrr - 15 - nC IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device Package Shipping MTB02N03H8 DFN5×6 (Pb-free lead plating) 3000 pcs / Tape & Reel |
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