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MMBTA42 Datasheet(HTML) 1 Page - Diodes Incorporated

Part No. MMBTA42
Description  NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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MMBTA42 Datasheet(HTML) 1 Page - Diodes Incorporated

  MMBTA42 Datasheet HTML 1Page - Diodes Incorporated  
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DS30062 Rev. 4 - 2
1 of 2
MMBTA42
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·
Epitaxial Planar Die Construction
·
Complementary PNP Type Available
(MMBTA92)
·
Ideal for Medium Power Amplification and
Switching
Characteristic
Symbol
MMBTA42
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current (Note 1) (Note 3)
IC
500
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B C
C
B
H
G
D
K
E
Mechanical Data
·
Case: SOT-23, Molded Plastic
·
Case Material - UL Flammability Rating 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking (See Page 2): K3M
·
Ordering & Date Code Information: See Page 2
·
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (RqJA), power dissipation rating (Pd) and power derating curve (figure 1).
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
300
¾
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
300
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 100
mA, IC = 0
Collector Cutoff Current
ICBO
¾
100
nA
VCB = 200V, IE = 0
Collector Cutoff Current
IEBO
¾
100
nA
VCE = 6.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
25
40
40
¾¾
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.5
V
IC = 20mA, IB = 2.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
0.9
V
IC = 20mA, IB = 2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
¾
3.0
pF
VCB = 20V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
50
¾
MHz
VCE = 20V, IC = 10mA,
f = 100MHz


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