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PZT5551L3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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PZT5551L3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : 2008.07.04 Page No. : 1/5 PZT5551L3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor PZT5551L3 Description The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514L3 • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation@TC=25℃ Pd 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C PZT5551L3 SOT-223 B C E B:Base C:Collector E:Emitter |
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