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2SD1535 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1535 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1535 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBZ=>,L=25mH 400 V VCEsat Collector-emitter saturation voltage IC=7A ; IB=70mA 2.0 V VBEsat Base-emitter saturation voltage IC=7A ; IB=70mA 2.5 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA ICEO Collector cut-off current VCE=400V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=12V; IC=0 100 mA hFE-1 DC current gain IC=2A ; VCE=2V 500 hFE-2 DC current gain IC=6A ; VCE=2V 200 fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 1.5 µs tstg Storage time 5.0 µs tf Fall time IC=7A ; IB1=-IB2=70mA VCC=300V 6.5 µs |
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