SQ2319ES

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Vishay Siliconix

S11-2111-Rev. C, 07-Nov-11

4

Document Number: 65735

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

2

4

6

8

10

12

Q

I

V

0.001

0.01

0.1

1

10

100

0.0

0.3

0.6

0.9

1.2

1.5

V

T

T

-0.5

-0.2

0.1

0.4

0.7

1.0

- 50

- 25

0

25

50

75

100

125

150

175

T

I

I

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

T

I

V

V

0.0

0.2

0.4

0.6

0.8

1.0

02468

10

V

T

T

-50

-48

-46

-44

-42

-40

- 50

- 25

0

25

50

75

100

125

150

175

T

I