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Any changes of specification will not be informed individually.

SMG2325

Ω

Ω

Ω

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

15-Aug-2011 Rev. A

Page 2 of 4

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

250

-

-

V

Gate-Threshold Voltage

1.5

-

3.5

V

Gate-Body Leakage Current

-

-

nA

Drain-Source Leakage Current

-

-

1

µA

Drain-Source On-Resistance

1

-

-

1.7

-

-

1.9

Diode Forward Voltage

1

-

-

1.2

V

Dynamic

Total Gate Charge

-

30

-

nC

Total Gate Charge

-

17

-

Gate-Source Charge

-

3

-

Gate-Drain (‘‘Miller’’) Charge

-

12

-

Turn-on Delay Time

1

-

19

-

nS

Rise Time

-

4

-

Turn-off Delay Time

-

48

-

Fall Time

-

13

-

Input Capacitance

-

1170

-

pF

f=1.0MHz

Output Capacitance

-

36

-

Reverse Transfer Capacitance

-

10

-

Notes:

1.

Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C /W when mounted on min. copper pad.

2.

The data tested by pulsed , pulse width

300us , duty cycle

2%

≦

≦

3.

The power dissipation is limited by 150°C juncti on temperature

4.