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SMG2325 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG2325 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG2325 0.45A , 250V , RDS(ON) 1.7Ω Ω Ω Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 15-Aug-2011 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 250 - - V VGS=0, ID=250µA Gate-Threshold Voltage VGS(th) 1.5 - 3.5 V VDS=VGS, ID=250µA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V Drain-Source Leakage Current IDSS - - 1 µA VDS=250V, VGS=0 Drain-Source On-Resistance 1 RDS(ON) - - 1.7 VGS=10V, ID=0.45A - - 1.9 VGS=4.5V, ID=0.35A Diode Forward Voltage 1 VSD - - 1.2 V IS=0.45A, VGS=0 Dynamic Total Gate Charge Qg - 30 - nC VDS=200V,VGS=10V, ID=0.45A Total Gate Charge Qg - 17 - VDS=200V, VGS=4.5V, ID=0.45A Gate-Source Charge Qgs - 3 - Gate-Drain (‘‘Miller’’) Charge Qgd - 12 - Turn-on Delay Time 1 Td(on) - 19 - nS VDD=125V, VGS=10V, RG=6 , RL=125 , ID=0.45A Rise Time Tr - 4 - Turn-off Delay Time Td(off) - 48 - Fall Time Tf - 13 - Input Capacitance Ciss - 1170 - pF VGS=0, VDS=15V, f=1.0MHz Output Capacitance Coss - 36 - Reverse Transfer Capacitance Crss - 10 - Notes: 1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C /W when mounted on min. copper pad. 2. The data tested by pulsed , pulse width 300us , duty cycle 2% ≦ ≦ 3. The power dissipation is limited by 150°C juncti on temperature 4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. |
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