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DS2101SY12 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DS2101SY12 Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 7 page  3/7 www.dynexsemi.com DS2101SY SURGE RATINGS Conditions 10ms half sine; T case = 190 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case =190 oC V R = 0 Max. Units Symbol Parameter I FSM Surge (non-repetitive) forward current I 2tI2t for fusing I FSM Surge (non-repetitive) forward current I 2t I 2t for fusing A 2s 79.0 kA 25.9 x 106 A2s 72.0 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.019 Anode dc Clamping force 43.0kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.002 Double side - 190 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 38.0 47.0 kN –55 190 oC On-state (conducting) 200 oC - 0.004 oC/W oC/W Cathode dc - 0.019 oC/W Double side cooled - 0.0095 oC/W 31.2 x 10 6 - - |
Similar Part No. - DS2101SY12 |
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Similar Description - DS2101SY12 |
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