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BAP64W Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAP64W Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente BAP64W-04 / BAP64W-05 / BAP64W-06 Small Signal General Purpose PiN Diode 24-Jan-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low diode capacitance Low series inductance High voltage, current controlled RF resistor for RF attenuators and switches RF attenuators and switches MARKING CODE PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Continuous Reverse Voltage VR 175 V Continuous Forward Current IF 100 mA Power Dissipation PD 250 mW Thermal Resistance Junction to Ambient RθJA 500 °C / W Junction, Storage Temperature TJ, TSTG 150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage VF - - 1.1 V IF =50mA - - 10 VR =175V Reverse Voltage Leakage Current IR - - 1 µA VR =20V - 0.52 - VR =0, f =1MHz - - 0.5 VR =1 V, f =1MHz Diode Capacitance CD - - 0.35 pF VR =20 V, f =1MHz - - 40 IF = 0.5 mA, f =100MHz - - 20 IF =1mA, f =100MHz - - 3.8 IF =10mA, f =100MHz Diode Forward Resistance 1 rD - - 1.35 IF =100mA, f =100MHz Charge Carrier Life Time tL - 1.55 - µS When switched from IF =10mA to IR =6mA; RL =100 ; measured at IR =3mA Series Inductance LS - 1.4 - nH IF=10mA, f=100MHz Note: 1.Guaranteed on AQL basis: inspection level S4,AQL 1.0. Part Name BAP64W-04 BAP64W-05 BAP64W-06 Marking 4K 5K 6K Circuit Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.80 2.00 L 0.89 1.02 F 0.30 0.50 SOT-23 |
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