Electronic Components Datasheet Search |
|
GP200MHS12 Datasheet(PDF) 7 Page - Dynex Semiconductor |
|
GP200MHS12 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 10 page GP200MHS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com Fig. 11 Forward bias safe operating area 0 50 100 150 200 250 300 350 400 450 500 0 200 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) RBSOA Tcase = 125˚C Vge = ±15V Rg = 4.7Ω* *Recommended minimum value Fig. 12 Transient thermal impedance 1 10 100 1000 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Diode Transistor Fig. 13 3 Phase inverter operating frequency Fig. 14 DC current rating vs case temperature 0 50 100 150 200 250 300 350 400 450 500 110 50 fmax - (kHz) PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 Conditions: Tj = 125°C, Tc = 75°C, Rg = 4.7Ω, VCC = 600V 0 40 80 120 160 200 240 280 320 020 40 60 10 30 50 80 70 90 100 110 120 130 Case temperature, Tcase - (˚C) |
Similar Part No. - GP200MHS12 |
|
Similar Description - GP200MHS12 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |