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GP200MHS12 Datasheet(PDF) 7 Page - Dynex Semiconductor

Part # GP200MHS12
Description  Half Bridge IGBT Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP200MHS12 Datasheet(HTML) 7 Page - Dynex Semiconductor

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GP200MHS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
www.dynexsemi.com
Fig. 11 Forward bias safe operating area
0
50
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500
0
200
400
600
800
1000
1200
Collector-emitter voltage, Vce - (V)
RBSOA
Tcase = 125˚C
Vge = ±15V
Rg = 4.7Ω*
*Recommended minimum value
Fig. 12 Transient thermal impedance
1
10
100
1000
0.001
0.01
1
0.1
10
Pulse width, tp - (s)
Diode
Transistor
Fig. 13 3 Phase inverter operating frequency
Fig. 14 DC current rating vs case temperature
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50
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110
50
fmax - (kHz)
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
Conditions:
Tj = 125°C, Tc = 75°C,
Rg = 4.7Ω, VCC = 600V
0
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020
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Case temperature, Tcase - (˚C)


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