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GP200MLS12 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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GP200MLS12 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 10 page GP200MLS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical turn-on energy vs collector current 0 50 100 150 300 350 400 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12/10V Common emitter Tcase = 25˚C 250 200 0 50 100 150 300 350 400 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12/10V Common emitter Tcase = 125˚C 250 200 0 200 50 Collector current, IC - (A) 0 40 Tj = 125˚C VGE = ±15V VCE = 600V A: Rg = 10 Ω B: Rg = 6.2 Ω C: Rg = 4.7 Ω A B C 50 60 10 20 30 100 150 Fig. 6 Typical turn-off energy vs collector current 0 200 50 100 Collector current, IC - (A) 0 5 15 50 Tj = 125˚C VGE = ±15V VCE = 600V A: Rg = 10 Ω B: Rg = 6.2 Ω C: Rg = 4.7 Ω A B C 20 25 30 35 40 45 150 10 |
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