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TF440 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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TF440 Datasheet(HTML) 2 Page - Dynex Semiconductor |
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2 / 13 page  TF440..C 2/13 SURGE RATINGS Parameter Conditions Max. Units I 2t for fusing 10ms half sine; V R = 0% VRRM, Tj = 125˚C 4.0 kA A 2s Surge (non-repetitive) on-state current 10ms half sine; V R = 0% VRRM, Tj = 125˚C Symbol I TSM I 2t 80.0 x 103 THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.133 Anode dc Clamping force 5.0kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.02 Double side - 125 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 4.75 5.25 kN -40 150 oC - On-state (conducting) - 125 oC - 0.04 oC/W oC/W Cathode dc - 0.154 oC/W Double side cooled - 0.07 oC/W MEASUREMENT OF RECOVERED CHARGE - Q RA1 0.5x I RR I RR Q RA1 t p = 1ms ITM dI R/dt Measurement of Q RA1 : QRA1 = IRR x tRR 2 |
Similar Part No. - TF440 |
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Similar Description - TF440 |
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