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TF70910Y Datasheet(PDF) 3 Page - Dynex Semiconductor |
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TF70910Y Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 13 page  TF709..Y 3/13 DYNAMIC CHARACTERISTICS V TM Parameter Symbol Conditions Maximum on-state voltage At 2000A peak, T case = 25 oC I RRM/IDRM Peak reverse and off-state current At V RRM/VDRM, Tcase = 125 oC Gate source 20V, 20 Ω t r ≤ 0.5µs, Tj = 125˚C dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V DRM Tj = 125 oC, Gate open circuit Min. Max. Units - 2.05 V -40 mA - 300 V/ µs Repetitive 50Hz - 500 A/ µs Non-repetitive - 800 A/ µs Rate of rise of on-state current dI/dt V T(TO) Threshold voltage At T vj = 125 oC r T On-state slope resistance At T vj = 125 oC 1.25 -V - 0.4 m Ω Delay time t gd - 1.5* µs Total turn-on time t (ON)TOT - 3.5* µs T j = 25˚C, IT = 50A, V D = 300V, IG = 1A, dI/dt = 50A/ µs, dI G/dt = 1A/µs *Typical value. I H Holding current T j = 25 oC, I TM = 1A, VD = 12V 100* - mA T j = 125˚C, IT = 250A, VR = 50V, dV/dt = 20V/ µs (Linear to 60% V DRM), dI R/dt = 50A/µs, Gate open circuit Turn-off time t q 25 - µs t q code: Y GATE TRIGGER CHARACTERISTICS AND RATINGS V DRM = 12V, T case = 25 oC, R L = 6Ω Conditions Parameter Symbol V GT Gate trigger voltage V DRM = 12V, Tcase = 25 oC, R L = 6Ω I GT Gate trigger current V GD Gate non-trigger voltage At V DRM Tcase = 125 oC, R L = 1kΩ - 3.0 V - 200 mA - 0.2 V Typ. Max. Units V RGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode P GM Peak gate power P G(AV) Mean gate power - 5.0 V -10 A -50 W -3 W I L Latching current T j = 25 oC, I G = 0.5A, VD = 12V 300* - mA |
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