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TK2618M Datasheet(PDF) 3 Page - Dynex Semiconductor |
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TK2618M Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 8 page  3/8 TK26 www.dynexsemi.com DYNAMIC CHARACTERISTICS V TM Parameter Symbol Conditions Maximum on-state voltage At 450A peak, T case = 25 oC I RRM/IDRM Peak reverse and off-state current At V RRM/VDRM, Tcase = 125 oC Gate source 20V, 20 Ω t r ≤ 0.5µs, Tj = 125˚C dV/dt Maximum linear rate of rise of off-state voltage To 60% V DRM Tj = 125 oC, Gate open circuit Min. Max. Units - 1.85 V -25 mA - 200 V/ µs Repetitive 50Hz - 500 A/ µs Non-repetitive - 800 A/ µs Rate of rise of on-state current dI/dt V T(TO) Threshold voltage At T vj = 125 oC r T On-state slope resistance At T vj = 125 oC t gd Delay time I L Latching current T j = 25 oC, V D = 12V I H Holding current T j = 25 oC, V D = 12V, ITM = 1A 1.25 -V - 1.33 m Ω - 1.5 µs V D = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs, dI G/dt = 1A/µs, Tj = 25 oC -- mA -50 mA GATE TRIGGER CHARACTERISTICS AND RATINGS V DRM = 12V, T case = 25 oC, R L = 6Ω Conditions Parameter Symbol V GT Gate trigger voltage V DRM = 12V, Tcase = 25 oC, R L = 6Ω I GT Gate trigger current V GD Gate non-trigger voltage At V DRM Tcase = 125 oC, R L = 1kΩ V FGM Peak forward gate voltage Anode positive with respect to cathode V FGN Peak forward gate voltage Anode negative with respect to cathode V RGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode P GM Peak gate power - P G(AV) Mean gate power - 3.0 V - 200 mA - 0.2 V -30 V - 0.25 V -5 V -4 A -16 W -3 W Typ. Max. Units |
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