Elektronische Bauelemente

SPR35P03

Ω

Ω

Ω

P-Channel Enhancement Mode Power MOSFET

19-May-2014 Rev.A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

-30

-

-

V

Gate-Threshold Voltage

-1

-

-2.5

V

Forward Tranconductance

-

5

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

-1

Drain-Source Leakage Current

-

-

-5

µA

-

-

27

Static Drain-Source On-Resistance

2

-

-

35

m

Gate Resistance

-

18

26

f =1.0MHz

Total Gate Charge

-

12.5

-

Gate-Source Charge

-

5.4

-

Gate-Drain (“Miller”) Change

-

5

-

nC

Turn-on Delay Time

2

-

4.4

-

Rise Time

-

11.2

-

Turn-off Delay Time

-

34

-

Fall Time

-

18

-

nS

Input Capacitance

-

1345

-

Output Capacitance

-

194

-

Reverse Transfer Capacitance

-

158

-

pF

f =1.0MHz

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

5

EAS

33.7

-

-

mJ

Source-Drain Diode

Diode Forward Voltage

2

-

-

-1.2

V

Continuous Source Current

1,6

-

-

-35

A

Pulsed Source Current

2,6

-

-

-70

A

Reverse Recovery Time

-

12.4

-

nS

Reverse Recovery Charge

-

5

-

nC

IF= -15A, dl/dt=100A/µs,

Note:

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

4. The power dissipation is limited by 150°C juncti on temperature

5. The Min. value is 100% EAS tested guarantee.

6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.