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BLF6G10LS-260PRN Datasheet(PDF) 8 Page - NXP Semiconductors

Part # BLF6G10LS-260PRN
Description  260 W LDMOS power transistor for base station applications
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF6G10LS-260PRN Datasheet(HTML) 8 Page - NXP Semiconductors

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BLF6G10L-260PRN_LS-260PRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 12 July 2013
8 of 15
NXP Semiconductors
BLF6G10L(S)-260PRN
Power LDMOS transistor
8.
Test information
8.1 Test circuit
Figure 6 shows the PCB test circuit layout
8.2 Bill of materials (B.O.M.)
The following Bill of materials (Table 10) shows a list of all the components needed to
build the RF test circuit.
The above layout shows the test circuit used to measure the devices in production. The RF Power and Base-Stations group can
provide a more appropriate application demonstration for specific customer needs.
Fig 6.
Input and output test circuit PCBs’
NXP BLF6G10L-260PRN
Output Rev 01
NXP
BLF6G10L-260PRN
Input Rev 01
+
+
C10
C13
C9
C1
C5
C4
R3
R6
C7
C11
C12
C14
014aab129
Table 10.
Bill of materials
Component
Description
Type
Value
Code number
Remarks
base plate
see mechanical
drawing.
input PCB
see PCB info.
output PCB
see PCB info.
15
 bolt M2
brass (nickel plated)
15
 washer M2
brass (nickel plated)
4
 contact block
12
 4 mm
brass (milled)
rubber O-ring
Viton
17
 1 mm
conductive elastomer
(“silver” rubber)
Chomerics
35
 1 mm
(2x)
CHO-SEAL 1273


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