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BY398 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BY398 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BY396 - BY399 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 800 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BY396 BY397 BY398 BY399 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 100 200 400 800 Volts Maximum RMS Voltage VRMS 70 140 280 560 Volts Maximum DC Blocking Voltage VDC 100 200 400 800 Volts Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C IF(AV) 3.0 Amps. Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 100 Amps. Maximum Peak Forward Voltage at IF = 3.0 Amps. VF 1.25 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 100 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 250 ns Typical Junction Capacitance ( Note 2 ) CJ 60 pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC UPDATE : APRIL 23, 1998 RATING DO-201AD 0.21 (5.33) 0.19 (4.82) 0.375 (9.52) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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