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BY550-100 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BY550-100 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BY550-50 ~ BY550-1000 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BY550 - 50 BY550 - 100 BY550 - 200 BY550 - 400 BY550 - 600 BY550 - 800 BY550 - 1000 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 60 °C IF 5.0 Amps. Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 300 Amps. Maximum Forward Voltage at IF = 5.0 Amps. VF 0.95 Volts Maximum DC Reverse Current Ta = 25 °C IR 20 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Typical Junction Capacitance (Note1) CJ 50 pF Typical Thermal Resistance (Note2) R θJA 18 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. UPDATE : MAY 27, 1998 RATING 0.21 (5.33) 0.19 (4.83) DO - 201AD 0.375 (9.53) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 1.00 (25.4) MIN. |
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