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GN1M Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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GN1M Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page GN1A - GN13 GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 1300 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 910 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 1300 Volts Maximum Average Forward Current Ta = 75 °C IF(AV) 1.0 Amp. Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 30 Amps. Maximum Forward Voltage at IF = 1.0 Amp. VF 1.0 Volts Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Typical Junction Capacitance (Note1) CJ 8 pF Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC UPDATE : MAY 27, 1998 RATING 2.1 ± 0.2 SMA (DO-214AC) 1.2 ± 0.2 2.6 ± 0.15 Dimensions in millimeter 1.1 ± 0.3 0.2 ± 0.07 2.0 ± 0.2 |
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