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IRFS4228PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFS4228PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 09/14/07 IRFS4228PbF IRFSL4228PbF Notes through are on page 10 Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l 175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability PDP SWITCH GD S Gate Drain Source S D G D2Pak IRFS4228PbF TO-262 IRFSL4228PbF S D G S D G D D Absolute Maximum Ratings Parameter Units VGS Gate-to-Source Voltage V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c IRP @ TC = 100°C Repetitive Peak Current g PD @TC = 25°C Power Dissipation W PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case f ––– 0.45 °C/W RθJA Junction-to-Ambient (PCB Mount) , D2Pak h ––– 40 Max. 59 330 83 ±30 170 300 -40 to + 175 10lb xin (1.1Nxm) 330 170 2.2 VDS min 150 V VDS (Avalanche) typ. 180 V RDS(ON) typ. @ 10V 12 m : IRP max @ TC= 100°C 170 A TJ max 175 °C Key Parameters * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. * PD - 97231A |
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