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NCP1652DR2G Datasheet(PDF) 9 Page - ON Semiconductor |
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NCP1652DR2G Datasheet(HTML) 9 Page - ON Semiconductor |
9 / 34 page NCP1652, NCP1652A http://onsemi.com 9 ELECTRICAL CHARACTERISTICS (VCC = 15 V, VAC IN = 3.8 V, VFB = 2.0 V, VFF = 2.4 V, VLatch = open, VISPOS = −100 mV, COUTA = 1 nF, CT = 470 pF, CIAVG = 0.27 nF, CLatch = 0.1 nF, CM = 10 nF, RIAVG = 76.8 kW, Rdelay = 49.9 kW, COUTB = 330 pF, RRC = 43 kW, For typical Value TJ = 25°C, for min/max values TJ = −40°C to 125°C, unless otherwise noted) Parameter Unit Max Typ Min Symbol Test Condition STARTUP AND SUPPLY CIRCUITS Inhibit Bias Current VHV = 40 V, VCC = 0.8 * Vinhibit Iinhibit 40 - 500 mA Minimum Startup Voltage Istart = 0.5 mA, VCC = VCC(on) – 0.5 V Vstart(min) – – 40 V Startup Current VCC = VCC(on) – 0.5 V, VFB = Open Istart 3.0 5.62 8.0 mA Off−State Leakage Current VHV = 400 V, TJ = 25°C TJ = −40°C to 125°C IHV(off) – – 17 15 40 80 mA Supply Current Device Disabled (Overload) Device Switching VFB = Open fOSC [ 100 kHz ICC1 ICC2 – – 0.72 6.25 1.2 7.2 mA FAULT PROTECTION Overload Timer tOVLD 120 162 360 ms Overload Detect Threshold VOVLD 4.7 4.9 5.2 V Brown−Out Detect Threshold (entering fault mode) VFF Decreasing, VFB = 2.5 V, VAC IN = 2.0 V VBO(low) 0.41 0.45 0.49 V Brown−Out Exit Threshold (exiting fault mode) VFF Increasing, VFB = 2.5 V, VAC IN = 2.0 V VBO(high) 0.57 0.63 0.69 V Brown−Out Hysteresis VBO(HYS) − 174 − mV LATCH INPUT Pull−Down Latch Voltage Threshold VLatch Decreasing Vlatch(low) 0.9 0.98 1.1 V Pull−Up Latch Voltage Threshold VLatch Increasing Vlatch(high) 5.6 7.0 8.4 V Latch Propagation Delay VLatch = Vlatch(high) tlatch(delay) 30 56 90 ms Latch Clamp Current (Going Out) VLatch = 1.5 V Ilatch(clamp) 42 51 58 mA Latch Clamp Voltage (ILatch Going In) ILatch = 50 mA Vlatch(clamp) 2.5 3.27 4.5 V Latch−Off Current Shutdown (Going In) VLatch Increasing Ilatch(shdn) − 95 − mA 3. Guaranteed by Design |
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