FT1500AU-240 datasheet(4/4 Pages) MITSUBISHI

Part #	FT1500AU-240

Description	HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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4 / 4 page

Feb.1999

MITSUBISHI GENERAL USE THYRISTORS

FT1500AU-240

HIGH VOLTAGE, HIGH POWER, GENERAL USE

DYNAMIC GATE, PRESS PACK TYPE

5

10

15

20

02468

10

13579

diG/dt = 1.5A/

µs

VD = 6000V

ITM = 3000A

diT/dt = 100A/

µs

Tj = 125°C

0.1VD

t

0

VD

0.1 IGM

IGM

tgt

0

1000

2000

3000

0

100

50

150

t

VR

di/dt

dv/dt

0

+

–

tq

VD

ITM

ITM = 2800A

di/dt = –10A/

µs

VR = 100V

VD = 6000V

dv/dt = 3V/

µs

0

500

1000

1500

2000

2500

3000

–60

–20

20

60

100

140

IH

IL

t

0

IL

tgw

IG

VARIABLE RESISTANCE

METHOD

IL condition :

IH condition :

VD = 6V

IG = 1050mA

tgw = 200

µs

VD = 12V

0

1000

2000

3000

100

101

23 4 5 7

102

23 4 5 7

t

VR

di/dt

dv/dt

0

+

–

tq

VD

ITM

ITM = 2800A

di/dt = –10A/

µs

VR = 100V

VD = 6000V

Tj = 80°C

0

2000

4000

6000

8000

10000

0

150

50

100

t

trr

trr !Irm

QRR =

2

Irm

ITM

VRM

di/dt

0

+

–

ITM = 3000A

di/dt = –10A/

µs

VRM = 150V

JUNCTION TEMPERATURE (°C)

HOLDING CURRENT LATCHING CURRENT VS.

JUNCTION TEMPERATURE

(TYPICAL)

GATE CURRENT (A)

TURN-ON TIME VS. GATE

CURRENT (TYPICAL)

JUNCTION TEMPERATURE (°C)

TURN-OFF TIME VS. JUNCTION

TEMPERATURE (TYPICAL)

RATE OF DECREASE OF ON-STATE CURRENT (A /

µs)

REVERSE RECOVERED

CHARGE VS. RATE OF DECREASE

OF ON-STATE CURRENT (TYPICAL)

JUNCTION TEMPERATURE (°C)

REVERSE RECOVERED CHARGE VS.

JUNCTION TEMPERATURE

(TYPICAL)

RATE-OF-RISE OF OFF-STATE VOLTAGE (V/

µs)

TURN-OFF TIME VS.

RATE OF RISE OF OFF-STATE VOLTAGE

(TYPICAL)

100

7101

23

5 7

23

5 7

103

3

5

7

104

2

3

5

7

2

3

t

trr

trr !Irm

QRR =

2

Irm

ITM

VRM

di/dt

0

+

–

ITM = 3000A

VRM = 150V

Tj = 125°C

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