Electronic Components Datasheet Search |
|
SIHF620S Datasheet(PDF) 2 Page - Vishay Siliconix |
|
SIHF620S Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91028 2 S11-1046-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF620S, SiHF620S Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -40 Maximum Junction-to-Case (Drain) RthJC -2.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.1 Ab - - 0.80 Forward Transconductance gfs VDS = 50 V, ID = 3.1 Ab 1.5 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 260 - pF Output Capacitance Coss - 100 - Reverse Transfer Capacitance Crss -30 - Total Gate Charge Qg VGS = 10 V ID = 4.8 A, VDS = 160 V, see fig. 6 and 13b -- 14 nC Gate-Source Charge Qgs -- 3.0 Gate-Drain Charge Qgd -- 7.9 Turn-On Delay Time td(on) VDD = 100 V, ID = 4.8 A, Rg = 18 , RD = 20 , see fig. 10b -7.2 - ns Rise Time tr -22 - Turn-Off Delay Time td(off) -19 - Fall Time tf -13 - Dynamic Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 5.2 A Pulsed Diode Forward Currenta ISM -- 18 Body Diode Voltage VSD TJ = 25 °C, IS = 5.2 A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μsb - 150 300 ns Body Diode Reverse Recovery Charge Qrr - 0.91 1.8 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
Similar Part No. - SIHF620S |
|
Similar Description - SIHF620S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |