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FQD17N08L Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FQD17N08L Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 www.fairchildsemi.com 4 Typical Characteristics (Continued) 10 -5 10 -4 10 -3 10 -2 10 1 - 10 0 10 1 10 -1 10 0 ※ N o te s : 1 . Z θ JC( t ) = 3. 13 ℃ / W M ax . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC(t ) s in gle puls e D= 0 .5 0.02 0.2 0.05 0.1 0.0 1 25 50 75 100 125 150 0 3 6 9 12 15 T C, Case Temperature [℃] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 μs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 6.45 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ oC] V DS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature t 1 , S q uar e W av e P ul s e D ur at i on [ s ec ] Figure 11. Transient Thermal Response Curve t1 PDM t2 |
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