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FQPF6N90C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQPF6N90C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page December 2013 Thermal Characteristics FQP6N90C / FQPF6N90C N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3 Ω Description ©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 6.0 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3.0 A • Low Gate Charge (Typ. 30 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. Symbol Parameter FQP6N90C FQPF6N90C Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.75 2.25 °C/W RθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W TO-220 G DS TO-220F G DS G S D * Drain current limited by maximum junction temperature. Symbol Parameter FQP6N90C FQPF6N90C Unit VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) * 6 6 A - Continuous (TC = 100°C) 3.8 3.8 * A IDM Drain Current - Pulsed (Note 1) 24 24 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ IAR Avalanche Current (Note 1) 6A EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 167 56 W - Derate above 25°C 1.43 0.48 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 °C |
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